The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Dec. 17, 2012
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Jung-Ryul Ahn, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 29/66666 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01);
Abstract
A nonvolatile memory device includes a stacked structure disposed over a substrate and having a plurality of interlayer dielectric layers and conductive layers that are alternately stacked, a plurality of holes formed to pass through the stacked structure to expose the substrate, a first memory layer and a second memory layer formed separately in a circumference of each hole, and a first channel layer and a second channel layer formed respectively on the first and second memory layers.
Quick Actions:
Ahn, Jung-Ryul. (2014). Nonvolatile memory device and method for fabricating the same (U.S. Patent No. 8921921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8921921
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile