The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jun. 10, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Ching-Hung Kao, Hsinchu County, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 29/768 (2006.01); H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01); H01L 31/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14812 (2013.01); H01L 27/14687 (2013.01);
Abstract
A stacked wafer structure includes a CIS wafer, an ISP wafer, a lamination layer, a through silicon via and a pixel device. The CIS wafer bonds to the ISP wafer through the lamination layer. The pixel device is disposed on the CIS wafer. The through silicon via penetrates either the CIS wafer or the ISP wafer to connect devices in CIS wafer to the devices in ISP wafer electrically.