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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8921851 B1

PDFFull Text
Date of Patent:
Dec. 30, 2014

Filed:

Mar. 13, 2013

Non-polar plane of wurtzite structure material

Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Li Chang, Hsinchu, TW;

Yen-Teng Ho, Tainan, TW;

Assignee:

National Chiao Tung University, Hsinchu, TW;

Attorney:

Bacon & Thomas, PLLC

Primary Examiner:

Marcos D Pizarro

Assistant Examiner:

Sue Tang

Int. Cl.
CPC ...
H01L 29/04 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 23/08 (2006.01); C30B 25/18 (2006.01); C30B 25/06 (2006.01); C30B 29/16 (2006.01); C30B 29/40 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); H01L 29/045 (2013.01); C30B 23/066 (2013.01); C30B 23/08 (2013.01); C30B 25/186 (2013.01); C30B 25/06 (2013.01); C30B 25/18 (2013.01); C30B 29/16 (2013.01); C30B 29/406 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02554 (2013.01); H01L 21/02609 (2013.01); H01L 21/02631 (2013.01);
Abstract

The present invention relates to a method for growing a novel non-polar (130) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (130) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (130) plane obtained according to the aforementioned method.

Find Patent Forward Citations

Chang, Li. (2014). Non-polar plane of wurtzite structure material (U.S. Patent No. 8921851). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8921851

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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