The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Sep. 12, 2008
Applicants:

Kazuhiko Yamasaki, Naka-gun, JP;

Toshiharu Hayashi, Naka-gun, JP;

Masahide Arai, Naka-gun, JP;

Satoko Ogawa, Naka-gun, JP;

Yoshiaki Takata, Naka-gun, JP;

Inventors:

Kazuhiko Yamasaki, Naka-gun, JP;

Toshiharu Hayashi, Naka-gun, JP;

Masahide Arai, Naka-gun, JP;

Satoko Ogawa, Naka-gun, JP;

Yoshiaki Takata, Naka-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); B05D 5/12 (2006.01); H01L 31/0392 (2006.01); H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/052 (2014.01);
U.S. Cl.
CPC ...
H01L 31/03921 (2013.01); H01L 31/02168 (2013.01); H01L 31/02366 (2013.01); H01L 31/0527 (2013.01); Y02E 10/52 (2013.01);
Abstract

A composite film for a superstrate solar cell or a substrate solar cell has a transparent conductive film and a conductive reflective film, wherein the transparent conductive film is formed by using a wet coating method to apply a transparent conductive film composition or dispersion containing microparticles of a conductive oxide, the conductive reflective film is formed by using a wet coating method to apply a conductive reflective film composition containing metal nanoparticles, the average diameter of holes occurring at the contact surface of the conductive reflective film on either the side of the photovoltaic layer or the side of the transparent conductive film is not more than 100 nm, the average depth at which the holes are positioned is not more than 100 nm, and the number density of the holes is not more than 30 holes/μm.


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