The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Aug. 30, 2012
Xianyu Wenxu, Suwon-si, KR;
Jeong-yub Lee, Seoul, KR;
Chang -youl Moon, Suwon-si, KR;
Yong-young Park, Daejeon, KR;
Woo Young Yang, Hwaseong-si, KR;
Jae-joon OH, Seongnam-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Xianyu Wenxu, Suwon-si, KR;
Jeong-Yub Lee, Seoul, KR;
Chang -youl Moon, Suwon-si, KR;
Yong-Young Park, Daejeon, KR;
Woo Young Yang, Hwaseong-si, KR;
Jae-Joon Oh, Seongnam-si, KR;
In-Jun Hwang, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.