The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Apr. 11, 2012
Applicants:
Yoshio Kawashima, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Shinichi Imai, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 27/2436 (2013.01); H01L 45/04 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01);
Abstract
A method of manufacturing a variable resistance nonvolatile memory element includes: forming a lower electrode layer above a substrate; forming, on the lower electrode layer, a variable resistance layer including an oxygen-deficient transition metal oxide; forming an upper electrode layer on the variable resistance layer; and forming a patterned mask on the upper electrode layer and etching the upper electrode layer, the variable resistance layer, and the lower electrode layer using the patterned mask. In the etching, at least the variable resistance layer is etched using an etching gas containing bromine.