The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Apr. 17, 2014
United Microelectronics Corporation, Hsinchu, TW;
Hsiang-Chen Lee, Kaohsiung, TW;
Ping-Chia Shih, Tainan, TW;
Ke-Chi Chen, Taoyuan County, TW;
Chih-Ming Wang, Tainan, TW;
Chi-Cheng Huang, Kaohsiung, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A method for fabricating an integrated circuit includes the following steps of: providing a substrate with at least one isolation structure formed therein so as to separate the substrate into a first active region with a first stacked structure formed thereon and a second active region with a second stacked structure formed thereon; forming an interlayer dielectric layer covering the first stacked structure and the second stacked structure; and planarizing the interlayer dielectric layer to expose the top surface of the first stacked structure, wherein the second stacked structure is still covered by the interlayer dielectric layer after planarizing.