The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Feb. 18, 2013
Ulvac, Inc., Kanagawa, JP;
Marubun Corporation, Tokyo, JP;
Toshiba Kikai Kabushiki Kaisha, Tokyo, JP;
Ryuichiro Kamimura, Susono, JP;
Yamato Osada, Susono, JP;
Yukio Kashima, Tokyo, JP;
Hiromi Nishihara, Numazu, JP;
Takaharu Tashiro, Numazu, JP;
Takafumi Ookawa, Numazu, JP;
Ulvac, Inc., Kanagawa, JP;
Marubun Corporation, Tokyo, JP;
Toshiba Kikai Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the silicon-containing resist film with oxygen-containing plasma to form a silicon oxide film; dry-etching the organic resist film by using the silicon oxide film as an etching mask; dry-etching the n-type semiconductor layer by using the silicon oxide film and the organic resist film as an etching masks; and removing the silicon oxide film and the organic resist film.