The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Feb. 21, 2013
Applicant:

Etron Technology, Inc., Hsinchu, TW;

Inventors:

Ho-Yin Chen, Hsinchu County, TW;

Shi-Huei Liu, Hsinchu County, TW;

Assignee:

Etron Technology, Inc., Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/419 (2006.01); G11C 11/4063 (2006.01); G11C 11/406 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/4063 (2013.01); G11C 11/40615 (2013.01);
Abstract

The latency of a PSRAM is set according to its current state when receiving an external command. If the PSRAM is not executing a specific operation or has completed the specific operation while meeting corresponding timing parameters, the PSRAM is configured to execute the external command with a first latency. If the PSRAM is executing the specific operation or has completed the specific operation before meeting corresponding timing parameters, the PSRAM is configured to execute the external command with a second latency larger than the first latency.


Find Patent Forward Citations

Chen, Ho-Yin. (2014). Method of operating psram and related memory device (U.S. Patent No. 8917568). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8917568

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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