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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8916961 B1

PDFFull Text
Date of Patent:
Dec. 23, 2014

Filed:

Jul. 15, 2010

Insulation sheet made from silicon nitride, and semiconductor module structure using the same

Applicant:

Takayuki Naba, Chigasaki, JP;

Inventor:

Takayuki Naba, Chigasaki, JP;

Assignees:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama-shi, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

David Vu

Assistant Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 23/04 (2006.01); C04B 35/584 (2006.01); C04B 41/00 (2006.01); C04B 41/48 (2006.01); C04B 41/49 (2006.01); C04B 41/51 (2006.01); C04B 41/83 (2006.01); C04B 41/88 (2006.01); H01L 23/15 (2006.01); H01L 23/373 (2006.01); H01L 23/40 (2006.01); C04B 111/00 (2006.01);
U.S. Cl.
CPC ...
C04B 35/584 (2013.01); C04B 41/009 (2013.01); C04B 41/4853 (2013.01); C04B 41/4961 (2013.01); C04B 41/5116 (2013.01); C04B 41/5127 (2013.01); C04B 41/515 (2013.01); C04B 41/5155 (2013.01); C04B 41/5161 (2013.01); C04B 41/83 (2013.01); C04B 41/88 (2013.01); H01L 23/15 (2013.01); H01L 23/3735 (2013.01); H01L 23/4006 (2013.01); C04B 2111/00844 (2013.01); C04B 2235/767 (2013.01); C04B 2235/786 (2013.01); C04B 2235/788 (2013.01); C04B 2235/95 (2013.01); C04B 2235/96 (2013.01); C04B 2235/9607 (2013.01); C04B 2235/963 (2013.01);
Abstract

An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.

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Naba, Takayuki. (2014). Insulation sheet made from silicon nitride, and semiconductor module structure using the same (U.S. Patent No. 8916961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8916961

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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