The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Jul. 15, 2010
Applicant:
Takayuki Naba, Chigasaki, JP;
Inventor:
Takayuki Naba, Chigasaki, JP;
Assignees:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/04 (2006.01); C04B 35/584 (2006.01); C04B 41/00 (2006.01); C04B 41/48 (2006.01); C04B 41/49 (2006.01); C04B 41/51 (2006.01); C04B 41/83 (2006.01); C04B 41/88 (2006.01); H01L 23/15 (2006.01); H01L 23/373 (2006.01); H01L 23/40 (2006.01); C04B 111/00 (2006.01);
U.S. Cl.
CPC ...
C04B 35/584 (2013.01); C04B 41/009 (2013.01); C04B 41/4853 (2013.01); C04B 41/4961 (2013.01); C04B 41/5116 (2013.01); C04B 41/5127 (2013.01); C04B 41/515 (2013.01); C04B 41/5155 (2013.01); C04B 41/5161 (2013.01); C04B 41/83 (2013.01); C04B 41/88 (2013.01); H01L 23/15 (2013.01); H01L 23/3735 (2013.01); H01L 23/4006 (2013.01); C04B 2111/00844 (2013.01); C04B 2235/767 (2013.01); C04B 2235/786 (2013.01); C04B 2235/788 (2013.01); C04B 2235/95 (2013.01); C04B 2235/96 (2013.01); C04B 2235/9607 (2013.01); C04B 2235/963 (2013.01);
Abstract
An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.