The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Jul. 12, 2011
Applicants:
Gil-sang Yoo, Bucheon-si, KR;
Chang-rok Moon, Seocho-gu, KR;
Byung-jun Park, Yongin-si, KR;
Sang-hoon Kim, Seongnam-si, KR;
Seung-hun Shin, Suwon-si, KR;
Inventors:
Gil-Sang Yoo, Bucheon-si, KR;
Chang-Rok Moon, Seocho-gu, KR;
Byung-Jun Park, Yongin-si, KR;
Sang-Hoon Kim, Seongnam-si, KR;
Seung-Hun Shin, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01); H04N 5/225 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14603 (2013.01); H01L 27/14618 (2013.01); H01L 27/1464 (2013.01); H01L 27/14689 (2013.01); H04N 5/2253 (2013.01); H04N 5/2254 (2013.01);
Abstract
A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.