The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Apr. 17, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Christopher S. Olsen, Fremont, CA (US);

Yoshitaka Yokota, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3115 (2006.01); H01L 21/321 (2006.01); H01L 27/115 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/02332 (2013.01); H01L 21/0234 (2013.01); H01L 21/28273 (2013.01); H01L 21/3115 (2013.01); H01L 21/3211 (2013.01); H01L 27/11524 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01);
Abstract

Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, the method includes generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator, flowing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where a semiconductor device is disposed, wherein the semiconductor device has a substrate comprising an oxide layer formed thereon, exposing an exposed surface of the oxide layer to the nitrogen-containing radicals, and incorporating nitrogen in the exposed surface of the oxide layer of the substrate.


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