The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Jan. 13, 2013
Anpec Electronics Corporation, Hsin-Chu, TW;
Yung-Fa Lin, Hsinchu, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A method for fabricating a trench type transistor. An epitaxial layer is provided on a semiconductor substrate. A hard mask with an opening is formed on the epitaxial layer. A gate trench is etched into the substrate through the opening. A gate oxide layer and a trench gate are formed within the gate trench. After forming a cap layer atop the trench gate, the hard mask is removed. An ion well and a source doping region are formed in the epitaxial layer. A spacer is then formed on a sidewall of the trench gate and the cap layer. Using the cap layer and the spacer as an etching hard mask, the epitaxial layer is etched in a self-aligned manner, thereby forming a contact hole.