The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Jan. 29, 2009
Applicants:

Christian Schmid, Regensburg, DE;

Tilman Schlenker, Nittendorf, DE;

Heribert Zull, Regensburg, DE;

Ralph Paetzold, Roth, DE;

Markus Klein, Tegernheim, DE;

Karsten Heuser, Erlangen, DE;

Inventors:

Christian Schmid, Regensburg, DE;

Tilman Schlenker, Nittendorf, DE;

Heribert Zull, Regensburg, DE;

Ralph Paetzold, Roth, DE;

Markus Klein, Tegernheim, DE;

Karsten Heuser, Erlangen, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/52 (2010.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 23/31 (2006.01); H01L 51/56 (2006.01); H01L 21/56 (2006.01); C23C 16/54 (2006.01); C23C 16/02 (2006.01); H01L 51/52 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 31/18 (2013.01); H01L 31/0216 (2013.01); H01L 23/3135 (2013.01); H01L 51/56 (2013.01); C23C 16/54 (2013.01); C23C 16/0272 (2013.01); H01L 51/5237 (2013.01); C23C 16/45525 (2013.01); C23C 16/50 (2013.01);
Abstract

A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate () with at least one functional layer (), applying at least one first barrier layer () on the functional layer () by means of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer () on the functional layer () by means of plasma-enhanced chemical vapor deposition (PECVD).


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