The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Oct. 09, 2012
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Tzung-Lin Li, Hsinchu, TW;

Chun-Chang Wu, Changhua County, TW;

Chih-Yu Tseng, Hsinchu County, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.


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Li, Tzung-Lin. (2014). Semiconductor structure and method for reducing noise therein (U.S. Patent No. 8912844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8912844

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