The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Oct. 29, 2010
Applicants:

Ronald Filippi, Wappingers Falls, NY (US);

Ping-chuan Wang, Hopewell Junction, NY (US);

Griselda Bonilla, Fishkill, NY (US);

Kaushik Chanda, Fishkill, NY (US);

Robert D. Edwards, Marlboro, NY (US);

Andrew H. Simon, Fishkill, NY (US);

Inventors:

Ronald Filippi, Wappingers Falls, NY (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Griselda Bonilla, Fishkill, NY (US);

Kaushik Chanda, Fishkill, NY (US);

Robert D. Edwards, Marlboro, NY (US);

Andrew H. Simon, Fishkill, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01); H01L 23/53238 (2013.01); H01L 21/76849 (2013.01);
Abstract

An improved interconnect structure including a dielectric layer having a conductive feature embedded therein, the conductive feature having a first top surface that is substantially coplanar with a second top surface of the dielectric layer; a metal cap layer located directly on the first top surface, wherein the metal cap layer does not substantially extend onto the second top surface; a first dielectric cap layer located directly on the second top surface, wherein the first dielectric cap layer does not substantially extend onto the first top surface and the first dielectric cap layer is thicker than the metal cap layer; and a second dielectric cap layer on the metal cap layer and the first dielectric cap layer. A method of forming the interconnect structure is also provided.


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