The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Jan. 17, 2012
Applicant:
Kyoung-sub Shin, Seongnam-si, KR;
Inventor:
Kyoung-Sub Shin, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10888 (2013.01); H01L 27/10885 (2013.01); H01L 21/76831 (2013.01); H01L 21/76804 (2013.01); H01L 27/10814 (2013.01); H01L 21/76897 (2013.01);
Abstract
Provided may be a semiconductor memory device and a method of forming the semiconductor memory device. The memory device of example embodiments may include a bit line structure including a bit line on a semiconductor substrate, and a buried contact plug structure including a buried contact pad and a buried contact plug that extends in a lower portion of the bit line from one side of the bit line and connected to the buried contact pad. A width of the buried contact plug near a top surface of the buried contact pad may be greater than a width of the buried contact plug adjacent to the bit line.