The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Jan. 19, 2012
Applicants:
Huanxin Liu, Beijing, CN;
Huojin Tu, Beijing, CN;
Inventors:
Huanxin Liu, Beijing, CN;
Huojin Tu, Beijing, CN;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01); H01L 29/12 (2006.01); H01L 21/306 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); H01L 21/30608 (2013.01); H01L 21/3083 (2013.01); H01L 29/7848 (2013.01); H01L 21/02433 (2013.01); H01L 21/0243 (2013.01); H01L 21/02658 (2013.01); H01L 21/02532 (2013.01); H01L 29/045 (2013.01); H01L 21/02639 (2013.01);
Abstract
A semiconductor device and manufacturing method therefor includes a Σ-shaped embedded source or drain regions. A U-shaped recess is formed in a Si substrate using dry etching and a SiGe layer is grown epitaxially on the bottom of the U-shaped recess. Using an orientation selective etchant having a higher etching rate with respect to Si than SiGe, wet etching is performed on the Si substrate sidewalls of the U-shaped recess, to form a Σ-shaped recess.