The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Mar. 27, 2012
Applicants:
Hee-jun Yang, Seoul, KR;
Seong-jun Park, Seoul, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Jin-seong Heo, Suwon-si, KR;
Inventors:
Hee-jun Yang, Seoul, KR;
Seong-jun Park, Seoul, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Jin-seong Heo, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/456 (2013.01); H01L 29/452 (2013.01); H01L 29/78 (2013.01); H01L 29/1606 (2013.01); H01L 29/41725 (2013.01); H01L 29/45 (2013.01);
Abstract
According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure.
Quick Actions:
Yang, Hee-jun. (2014). Electrode structure including graphene and field effect transistor having the same (U.S. Patent No. 8912530). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8912530
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile