The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
May. 24, 2011
Manchao Xiao, San Diego, CA (US);
Mark Leonard O'neill, San Marcos, CA (US);
Heather Regina Bowen, Vista, CA (US);
Hansong Cheng, Singapore, SG;
Xinjian Lei, Vista, CA (US);
Manchao Xiao, San Diego, CA (US);
Mark Leonard O'Neill, San Marcos, CA (US);
Heather Regina Bowen, Vista, CA (US);
Hansong Cheng, Singapore, SG;
Xinjian Lei, Vista, CA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino, a Cto Caryl, a linear or branched Cto Cfluorinated alkyl, and a Cto Ccyclic alkyl group.