The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Jun. 08, 2012
Zvi Or-bach, San Jose, CA (US);
Brian Cronquist, San Jose, CA (US);
Israel Beinglass, Sunnyvale, CA (US);
Jan Lodewijk DE Jong, Cupertino, CA (US);
Deepak C. Sekar, San Jose, CA (US);
Zeev Wurman, Palo Alto, CA (US);
Zvi Or-Bach, San Jose, CA (US);
Brian Cronquist, San Jose, CA (US);
Israel Beinglass, Sunnyvale, CA (US);
Jan Lodewijk de Jong, Cupertino, CA (US);
Deepak C. Sekar, San Jose, CA (US);
Zeev Wurman, Palo Alto, CA (US);
Monolthic 3D Inc., San Jose, CA (US);
Abstract
A semiconductor device, including: a first layer including first transistors; an interconnection layer overlying the first transistors, the interconnection layer providing interconnection for the first transistors; a bonding layer overlying the interconnection layer; a second layer overlying the bonding layer; and a carrier substrate for the transferring of the second layer, where the second layer includes at least one through second layer via, where the at least one through second layer via has a diameter of less than 100 nm, where the second layer includes a plurality of second transistors, and where the second layer is transferred from a donor wafer.