The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Mar. 26, 2012
Stefan Sedlmaier, Munich, DE;
Markus Zundel, Egmating, DE;
Franz Hirler, Isen, DE;
Johannes Baumgartl, Riegersdorf, AT;
Anton Mauder, Kolbermoor, DE;
Ralf Siemieniec, Villach, AT;
Oliver Blank, Villach, AT;
Michael Hutzler, Villach, AT;
Stefan Sedlmaier, Munich, DE;
Markus Zundel, Egmating, DE;
Franz Hirler, Isen, DE;
Johannes Baumgartl, Riegersdorf, AT;
Anton Mauder, Kolbermoor, DE;
Ralf Siemieniec, Villach, AT;
Oliver Blank, Villach, AT;
Michael Hutzler, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.