The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8907379 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 09, 2014

Filed:

Sep. 15, 2013
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Naoko Kurahashi, Kawasaki, JP;

Kozo Makiyama, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/285 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42372 (2013.01); H01L 21/28587 (2013.01); H01L 21/28593 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract

A semiconductor device has a semiconductor region including a gate electrode disposed over the semiconductor region, a first electrode portion, a second electrode portion standing substantially perpendicular to a surface of the semiconductor region and a substantially constant dimension in a direction parallel to the surface of the semiconductor region. The semiconductor device has a tapered portion disposed between the first electrode portion and the second electrode portion and has a dimension parallel to the surface of the semiconductor region increasing in the direction from the second electrode portion to the first electrode portion. Further, the semiconductor device includes a source and a drain electrode at both sides of the gate electrode over the semiconductor region and an insulating layer that covers a portion of the surface of the semiconductor region. Additionally, the second electrode portion may be positioned closer to one of the drain electrode and the source electrode.


Find Patent Forward Citations

Kurahashi, Naoko. (2014). Semiconductor device with a gate electrode having a shape formed based on a slope and gate lower opening and method of manufacturing the same (U.S. Patent No. 8907379). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8907379

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