The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Nov. 07, 2008
Hsiang-lan Lung, Elmsford, NY (US);
Erh-kun Lai, Elmsford, NY (US);
Yen-hao Shih, Elmsford, NY (US);
Yi-chou Chen, Hsinchu, TW;
Shih-hung Chen, Hsinchu County, TW;
Hsiang-Lan Lung, Elmsford, NY (US);
Erh-Kun Lai, Elmsford, NY (US);
Yen-Hao Shih, Elmsford, NY (US);
Yi-Chou Chen, Hsinchu, TW;
Shih-Hung Chen, Hsinchu County, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A memory device includes a driver comprising a pn-junction in the form of a multilayer stack including a first doped semiconductor region having a first conductivity type, and a second doped semiconductor region having a second conductivity type opposite the first conductivity type, the first and second doped semiconductors defining a pn-junction therebetween, in which the first doped semiconductor region is formed in a single-crystalline semiconductor, and the second doped semiconductor region includes a polycrystalline semiconductor. Also, a method for making a memory device includes forming a first doped semiconductor region of a first conductivity type in a single-crystal semiconductor, such as on a semiconductor wafer; and forming a second doped polycrystalline semiconductor region of a second conductivity type opposite the first conductivity type, defining a pn-junction between the first and second regions.