The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
May. 02, 2013
Tae Kyung Won, San Jose, CA (US);
Seon-mee Cho, Santa Clara, CA (US);
Soo Young Choi, Fremont, CA (US);
Beom Soo Park, San Jose, CA (US);
Dong-kil Yim, Pleasanton, CA (US);
John M. White, Hayward, CA (US);
Jozef Kudela, San Jose, CA (US);
Tae Kyung Won, San Jose, CA (US);
Seon-Mee Cho, Santa Clara, CA (US);
Soo Young Choi, Fremont, CA (US);
Beom Soo Park, San Jose, CA (US);
Dong-Kil Yim, Pleasanton, CA (US);
John M. White, Hayward, CA (US);
Jozef Kudela, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.