The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Jun. 25, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ryuichi Takashima, Miyagi, JP;

Yoshinobu Ooya, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01J 2237/334 (2013.01); H01L 21/3086 (2013.01); H01L 29/1608 (2013.01); H01L 21/3081 (2013.01);
Abstract

A metal mask having an etching pattern having a very high verticality is formed, and an etching shape having a very high verticality is formed by etching a semiconductor with the metal mask as a mask. A resist film patterned with a reversal pattern obtained by reversing an etching pattern is formed on a semiconductor (resist film forming process, S), a metal paste is filled in the reversal pattern of the resist film (metal paste filling process, S), a metal mask having the etching pattern is formed by removing the resist film while baking the metal paste by a heating control (metal mask forming process, S), and plasma etching is performed on the semiconductor by using the metal mask (etching process, S).


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