The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Mar. 02, 2011
Applicants:
Hiroshi Kambayashi, Yokohama, JP;
Akinobu Teramoto, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Inventors:
Assignee:
Tohoku University, Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/28264 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01); H01L 29/66522 (2013.01);
Abstract
A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layercomposed of tantalum nitride on an active layerand a second layercomposed of Al layered on the first layerand a process of forming ohmic electrodesandin ohmic contact with the active layerby heat treating the first layerand the second layerat a temperature of from 520° C. to 600° C.