The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Sep. 24, 2013
Air Water Inc., Sapporo-shi, Hokkaido, JP;
Katsutoshi Izumi, Itoh, JP;
Takashi Yokoyama, Osaka, JP;
Air Water Inc., , JP;
Abstract
A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layerinto an SOI substratein which the surface Si layerand an embedded oxide layerhaving a predetermined thickness are formed on an Si base material layerto convert the embedded oxide layerinto a PSG layerto lower a softening point, and an SiC forming step for heating the SOI substratehaving the PSG layerformed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layerinto SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layeron a surface thereof.