The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Nov. 12, 2012
Samsung Electronics Co., Ltd., Suwon-si, KR;
Myeong-Cheol Kim, Suwon-si, KR;
Il-Sup Kim, Suwon-si, KR;
Cheol Kim, Hwaseong-si, KR;
Jong-Chan Shin, Seongnam-si, KR;
Jong-Wook Lee, Yongin-si, KR;
Choong-Ho Lee, Yongin-si, KR;
Si-Young Choi, Seongnam-si, KR;
Jong-Seo Hong, Yongin-si, KR;
Abstract
Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.