The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Mar. 18, 2013
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventors:
Byoung Hoon Lee, Seoul, KR;
Chang Moon Lim, Seoul, KR;
Myoung Soo Kim, Seongnam-si, KR;
Jeong Su Park, Seoul, KR;
Jun Taek Park, Seoul, KR;
In Hwan Lee, Seoul, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/38 (2012.01); H01L 21/302 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 1/38 (2013.01); H01L 21/302 (2013.01); H01L 21/0274 (2013.01); H01L 21/033 (2013.01);
Abstract
A semiconductor device includes a cell mask pattern disposed in a cell region of a mask substrate and a vernier mask pattern disposed in a vernier region of the mask substrate. The vernier mask pattern includes a variable mask pattern portion to transfer a different shape of pattern depending on the magnitude of exposure energy.