The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Dec. 18, 2012
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventors:
Young Mo Lee, Cheongju-si, KR;
Byung Ho Nam, Daegu, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/24 (2012.01); G03F 1/76 (2012.01); G03F 1/80 (2012.01); G03F 1/72 (2012.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); G03F 1/76 (2013.01); G03F 1/80 (2013.01); G03F 1/72 (2013.01);
Abstract
Blank masks for extreme ultraviolet (EUV) photolithography are provided. The blank mask includes a substrate having a first surface and a second surface which are opposite to each other, a reflection layer disposed on the first surface of the substrate to reflect extreme ultraviolet (EUV) rays, an absorption layer disposed on the reflection layer opposite to the substrate to absorb extreme ultraviolet (EUV) rays, and a conductive layer disposed on the second surface of the substrate to expose portions of the substrate. Related methods are also provided.