The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Mar. 19, 2008
Applicants:

Mitsuru Hiroshima, Osaka, JP;

Hiromi Asakura, Hyogo, JP;

Inventors:

Mitsuru Hiroshima, Osaka, JP;

Hiromi Asakura, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); H01L 21/461 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); H05H 1/46 (2006.01); C23C 16/507 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); H01J 37/321 (2013.01); C23C 16/4558 (2013.01); C23C 16/507 (2013.01); H01J 37/3244 (2013.01); C23C 16/45574 (2013.01);
Abstract

A plasma processing apparatus includes a beam-shaped spacerwhich is placed at an upper opening of a chamberopposed to a substrateto support a dielectric plate. The dielectric plateis supported by the beam-shaped spacer. In the beam-shaped spacerare provided a plurality of process gas introducing portswhich have a depression angle θd and which are provided downward and directed toward the substrate, as well as a plurality of rare gas introducing portshaving a elevation angle θe directed toward the dielectric plate. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric platecan be achieved.


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