The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Dec. 13, 2011
Siyi LI, Fremont, CA (US);
Robert C. Hefty, Fremont, CA (US);
Mark Todhunter Robson, Danbury, CT (US);
James R. Bowers, Brookfield, CT (US);
Audrey Charles, Wappingers Falls, NY (US);
Siyi Li, Fremont, CA (US);
Robert C. Hefty, Fremont, CA (US);
Mark Todhunter Robson, Danbury, CT (US);
James R. Bowers, Brookfield, CT (US);
Audrey Charles, Wappingers Falls, NY (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SFor SiF, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.