The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8906207 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 09, 2014

Filed:

Apr. 06, 2011
Applicants:

Hong Sheng Yang, Pleasanton, CA (US);

Chi-i Lang, Cupertino, CA (US);

Tony Chiang, Campbell, CA (US);

Inventors:

Hong Sheng Yang, Pleasanton, CA (US);

Chi-I Lang, Cupertino, CA (US);

Tony Chiang, Campbell, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/54 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/34 (2013.01); C23C 14/54 (2013.01); C23C 14/548 (2013.01); H01J 37/3447 (2013.01);
Abstract

The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.


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