The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Oct. 15, 2013
Sandisk Technologies Inc., Plano, TX (US);
Deepanshu Dutta, Santa Clara, CA (US);
Ken Oowada, Fujisawa, JP;
Genki Sano, Kanagawa, JP;
Masaaki Higashitani, Cupertino, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Memory cells which have read noise are identified during a programming pass and an amount of programming is increased for noisy memory cells compared to non-noisy cells. The read noise is indicated by a decrease in the threshold voltage of a cell when the cell is repeatedly read. During the programming pass, a cell enters a temporary lockout state when it passes a first verify test. In this state, the cell is subject to one or more additional verify tests. If the one or more additional verify tests indicate that the threshold voltage of a cell has decreased, the cell is noisy and is soft programmed before being permanently locked out. In contrast, programming of a non-noisy cell is concluded after the first verify test without further programming.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile