The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Oct. 01, 2012
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Kozo Shimizu, Atsugi, JP;

Seiki Sakuyama, Isehara, JP;

Toshiya Akamatsu, Zama, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 21/50 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/50 (2013.01); H01L 2224/16506 (2013.01); H01L 2224/81931 (2013.01); H01L 2224/48091 (2013.01); H01L 23/49816 (2013.01); H01L 2224/32225 (2013.01); H01L 25/0655 (2013.01); H01L 2224/16238 (2013.01); H01L 2924/01327 (2013.01); H01L 2224/13111 (2013.01); H01L 23/5383 (2013.01); H01L 2224/81805 (2013.01); H01L 24/16 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81447 (2013.01); H01L 24/81 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/16145 (2013.01); H01L 2225/0651 (2013.01); H01L 2224/81002 (2013.01); H01L 2225/06513 (2013.01); H01L 23/3128 (2013.01); H01L 2924/01322 (2013.01); H01L 24/13 (2013.01); H01L 25/0657 (2013.01); H01L 2224/8121 (2013.01); H01L 2224/05647 (2013.01); H01L 23/49866 (2013.01); H01L 2924/15311 (2013.01); H01L 2224/81075 (2013.01); H01L 2224/83815 (2013.01); H01L 23/49827 (2013.01); H01L 2224/81893 (2013.01); H01L 2224/81191 (2013.01); H01L 2924/15192 (2013.01);
Abstract

A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder bump that connects the first and second pads and is made of metal containing Bi and Sn, wherein the bump includes a first interface-layer formed adjacent to the second pad, a second interface-layer formed adjacent to the first pad, a first intermediate region formed adjacent to either one of the interface-layers, and a second intermediate region formed adjacent to the other one of the interface-layers and formed adjacent to the first intermediate region; Bi-concentration in the first intermediate region is higher than a Sn-concentration; and a Sn-concentration in the second intermediate region is higher than a Bi-concentration.


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