The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Sep. 23, 2011
Yun-jong Yeo, Seoul, KR;
Byeong-hoon Cho, Seoul, KR;
Ki-hun Jeong, Cheonan-si, KR;
Hong-kee Chin, Suwon-si, KR;
Jung-suk Bang, Guri-si, KR;
Woong-kwon Kim, Cheonan-si, KR;
Sung-ryul Kim, Asan-si, KR;
Hee-joon Kim, Asan-si, KR;
Dae-cheol Kim, Hwaseong-si, KR;
Kun-wook Han, Seongnam-si, KR;
Yun-Jong Yeo, Seoul, KR;
Byeong-Hoon Cho, Seoul, KR;
Ki-Hun Jeong, Cheonan-si, KR;
Hong-Kee Chin, Suwon-si, KR;
Jung-Suk Bang, Guri-si, KR;
Woong-Kwon Kim, Cheonan-si, KR;
Sung-Ryul Kim, Asan-si, KR;
Hee-Joon Kim, Asan-si, KR;
Dae-Cheol Kim, Hwaseong-si, KR;
Kun-Wook Han, Seongnam-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.