The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Dec. 22, 2011
Andrew Joseph Kelly, Hengshan Township, Hsinchu County, TW;
Pei-shan Chien, Keelung, TW;
Yung-ta LI, Kaohsiung, TW;
Chan Syun Yang, Taipei, TW;
Andrew Joseph Kelly, Hengshan Township, Hsinchu County, TW;
Pei-Shan Chien, Keelung, TW;
Yung-Ta Li, Kaohsiung, TW;
Chan Syun Yang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of semiconductor fabrication including forming an inter-layer dielectric (ILD) layer on a semiconductor substrate. The ILD layer has an opening defined by sidewalls of the ILD layer. A spacer element is formed on the sidewalls of the ILD layer. A gate structure is formed in the opening adjacent the spacer element. In an embodiment, the sidewall spacer also for a decrease in the dimensions (e.g., length) of the gate structure formed in the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile