The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Aug. 30, 2013
Sumitomo Chemical Company, Limited, Tokyo, JP;
The University of Tokyo, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Takeshi Aoki, Tsukuba, JP;
Hisashi Yamada, Tsukuba, JP;
Noboru Fukuhara, Tsukuba, JP;
Masahiko Hata, Tsukuba, JP;
Masafumi Yokoyama, Tokyo, JP;
SangHyeon Kim, Tokyo, JP;
Mitsuru Takenaka, Tokyo, JP;
Shinichi Takagi, Tokyo, JP;
Tetsuji Yasuda, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
The University of Tokyo, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Eof the first crystal layer is larger than the electron affinity Eof the second crystal layer.