The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Sep. 25, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Kai Wu, Palo Alto, CA (US);
Sang-Hyeob Lee, Fremont, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Kiejin Park, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02175 (2013.01); H01L 21/02263 (2013.01);
Abstract
A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H) and tungsten hexafluoride (WF) precursor gases. The Hto WFflow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.