The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jan. 10, 2013
Intermolecular Inc., San Jose, CA (US);
Philip Kraus, San Jose, CA (US);
Thai Cheng Chua, Cupertino, CA (US);
Yoga Saripalli, Sunnyvale, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.