The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Oct. 05, 2011
Masaya Okada, Osaka, JP;
Makoto Kiyama, Itami, JP;
Yu Saitoh, Itami, JP;
Seiji Yaegashi, Tokyo, JP;
Mitsunori Yokoyama, Tokyo, JP;
Kazutaka Inoue, Yokohama, JP;
Masaya Okada, Osaka, JP;
Makoto Kiyama, Itami, JP;
Yu Saitoh, Itami, JP;
Seiji Yaegashi, Tokyo, JP;
Mitsunori Yokoyama, Tokyo, JP;
Kazutaka Inoue, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layerhaving an openingand the GaN-based stacked layerincludes n-type GaN-based drift layer/p-type GaN-based barrier layer/n-type GaN-based contact layer. The vertical semiconductor device includes a regrown layerlocated so as to cover the opening, the regrown layerincluding an electron drift layerand an electron supply layer, a source electrode S, and a gate electrode G located on the regrown layer. The gate electrode G covers a portion having a length corresponding to the thickness of the p-type GaN-based barrier layer and is terminated at a position on the wall surface, the position being away from the bottom portion of the opening.