Surrounding gate transistor semiconductor device

Abstract

It is intended to solve a problem of increase in power consumption and reduction in operating speed due to an increase in parasitic capacitance of a surrounding gate transistor (SGT) as a three-dimensional semiconductor device, to provide an SGT achieving an increase in speed and power consumption reduction in a semiconductor circuit. The semiconductor device comprises a second-conductive type impurity region () formed in a part of a first-conductive type semiconductor substrate (), a first silicon pillar () of an arbitrary cross-sectional shape formed on the second-conductive type impurity region, a first insulating body () surrounding a part of a surface of the first silicon pillar, a gate () surrounding the first insulating body, and a second silicon pillar () which is formed on the first silicon pillar and which includes a second-conductive type impurity region (). The gate is disposed to be separated from the semiconductor substrate by a second insulating body and is disposed to be separated from the second silicon pillar by the second insulating body. The capacitance between the gate and the semiconductor substrate is less than a gate capacitance, and the capacitance between the gate and the second silicon pillar is less than the gate capacitance.