The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Jun. 30, 2011
Junichi Koike, Sendai, JP;
Pilsang Yun, Sendai, JP;
Hideaki Kawakami, Chiba, JP;
Advanced Interconnect Materials, LLC, Miyagi, JP;
Abstract
An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layercomposed of an oxide semiconductor material containing indium, an ohmic electrodeprovided on the semiconductor layerand having an ohmic contact with the semiconductor layer, and an intermediate layerprovided between the semiconductor layerand the ohmic electrode, wherein the intermediate layerincludes a first regionwhose indium atomic concentration is greater than that of an interior of the semiconductor layerand a second regionwhose indium atomic concentration is less than that of the first region.