The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Sep. 27, 2013
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Daniel-Camille Bensahel, Grenoble, FR;
Yves Morand, Grenoble, FR;
Assignees:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics SA, Montrouge, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 21/22 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/22 (2013.01); H01L 21/02664 (2013.01); H01L 21/0245 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/02636 (2013.01); H01L 21/02532 (2013.01); H01L 29/66659 (2013.01); H01L 21/02381 (2013.01); H01L 29/36 (2013.01);
Abstract
A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction substantially perpendicular to the thickness of the substrate.