The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Sep. 30, 2013
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Ferruccio Frisina, S. Agata Li Battiati, IT;

Giuseppe Ferla, Acicastello, IT;

Angelo Magri′, Belpasso, IT;

Assignee:

STMicroelectronics S.R.L., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/861 (2006.01); H01L 29/732 (2006.01); H01L 29/739 (2006.01); H01L 21/265 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 29/66712 (2013.01); H01L 21/26586 (2013.01); H01L 29/0692 (2013.01); H01L 29/7809 (2013.01); H01L 29/41708 (2013.01); H01L 29/41716 (2013.01); H01L 29/8611 (2013.01); H01L 29/66272 (2013.01); H01L 29/417 (2013.01); H01L 29/7322 (2013.01); H01L 29/0878 (2013.01); H01L 29/66333 (2013.01); H01L 29/7398 (2013.01); H01L 29/0696 (2013.01); H01L 29/41766 (2013.01); H01L 29/41741 (2013.01); H01L 29/66128 (2013.01);
Abstract

A vertical conduction power device includes respective gate, source and drain areas formed in an epitaxial layer on a semiconductor substrate. The respective gate, source and drain metallizations are formed by a first metallization level. The gate, source and drain terminals are formed by a second metallization level. The device is configured as a set of modular areas extending parallel to each other. Each modular area has a rectangular elongate source area perimetrically surrounded by a gate area, and a drain area defined by first and second regions. The first regions of the drain extend parallel to one another and separate adjacent modular areas. The second regions of the drain area extend parallel to one another and contact ends of the first regions of the drain area.


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