The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Mar. 28, 2012
Applicant:

Xu Cheng, Chandler, AZ (US);

Inventor:

Xu Cheng, Chandler, AZ (US);

Assignee:

Icemos Technology Ltd., Belfast, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 21/762 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/861 (2013.01); H01L 29/66143 (2013.01); H01L 29/0661 (2013.01); H01L 29/407 (2013.01); H01L 29/1095 (2013.01); H01L 29/7811 (2013.01); H01L 29/0649 (2013.01); H01L 2224/4847 (2013.01); H01L 29/0653 (2013.01); H01L 2224/73265 (2013.01); H01L 29/872 (2013.01);
Abstract

A superjunction semiconductor device is provided having at least one column of a first conductivity type and at least one column of a second conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface. The at least one column of the second conductivity type has a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface. A termination structure is proximate the second sidewall surface of the at least one column of the second conductivity type. The termination structure includes a layer of dielectric of an effective thickness and consumes about 0% of the surface area of the first main surface. Methods for manufacturing superjunction semiconductor devices and for preventing surface breakdown are also provided.


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