The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Oct. 12, 2011
Hideaki Kikuchi, Kawasaki, JP;
Kouichi Nagai, Kawasaki, JP;
Hideaki Kikuchi, Kawasaki, JP;
Kouichi Nagai, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A ferroelectric capacitor provided with a ferroelectric film () is formed above a semiconductor substrate, and thereafter a wiring () directly connected to electrodes () of a ferroelectric capacitor is formed. Then, a silicon oxide film () covering the wiring () is formed. As the silicon oxide film (), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile