The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Jul. 19, 2013
Applicant:
D2s, Inc., San Jose, CA (US);
Inventors:
Harold Robert Zable, Palo Alto, CA (US);
Akira Fujimura, Saratoga, CA (US);
Assignee:
D2S, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/20 (2012.01); G03F 1/36 (2012.01); G03F 7/20 (2006.01); H01J 37/317 (2006.01); G06F 17/50 (2006.01); G03F 1/00 (2012.01); H01J 37/302 (2006.01); G03F 1/78 (2012.01);
U.S. Cl.
CPC ...
G03F 7/2061 (2013.01); H01J 2237/31764 (2013.01); Y10S 430/143 (2013.01); H01J 37/3174 (2013.01); H01J 37/3175 (2013.01); G06F 17/50 (2013.01); H01J 2237/31776 (2013.01); G03F 1/144 (2013.01); H01J 37/3026 (2013.01); G03F 7/2063 (2013.01); G03F 1/78 (2013.01);
Abstract
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.