The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Mar. 15, 2013
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Alok Vaid, Ballston Lake, NY (US);

Carsten Hartig, Meerane, DE;

Assignee:

GLOBALFOUNDRIES, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2011.01); H01L 21/66 (2006.01); G01D 21/00 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01D 21/00 (2013.01); H01L 22/10 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01); H01L 21/67276 (2013.01); H01L 21/02002 (2013.01); H01L 21/67248 (2013.01);
Abstract

Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining a first measurement of a first attribute of the semiconductor device structure from a first metrology tool, obtaining process information pertaining to fabrication of one or more features of the semiconductor device structure by a first processing tool, and determining an adjusted measurement for the first attribute based at least in part on the first measurement in a manner that is influenced by the process information.


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